Ballistic transport exceeding 28 \mu m in CVD grown graphene

Luca Banszerus; Michael Schmitz; Stephan Engels; Matthias Goldsche; Kenji Watanabe; Takashi Taniguchi; Bernd Beschoten; Christoph Stampfer

doi:10.1021/acs.nanolett.5b04840

Ballistic transport exceeding 28 \mu m in CVD grown graphene

Mesoscale and Nanoscale Physics 2016-02-24 v2

Authors: Luca Banszerus , Michael Schmitz , Stephan Engels , Matthias Goldsche , Kenji Watanabe , Takashi Taniguchi , Bernd Beschoten , Christoph Stampfer

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Abstract

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm $^2$ /(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.

Keywords

ballistic transport graphene chemical vapor deposition hexagonal boron nitride van der waals transfer carrier mobility bend resistance

Cite

@article{arxiv.1511.08601,
  title  = {Ballistic transport exceeding 28 \mu m in CVD grown graphene},
  author = {Luca Banszerus and Michael Schmitz and Stephan Engels and Matthias Goldsche and Kenji Watanabe and Takashi Taniguchi and Bernd Beschoten and Christoph Stampfer},
  journal= {arXiv preprint arXiv:1511.08601},
  year   = {2016}
}

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13 pages, 3 figures

Ballistic transport exceeding 28 \mu m in CVD grown graphene

Abstract

Keywords

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