English

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Mesoscale and Nanoscale Physics 2010-02-05 v1 Materials Science Other Condensed Matter
Authors: S. Weingart , C. Bock , U. Kunze , F. Speck , Th. Seyller , L. Ley
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Abstract

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

Keywords

ballistic transport epitaxial graphene cross junctions negative bend resistance low temperature nanoscale SiC(0001)

Cite

@article{arxiv.0910.4010,
  title  = {Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions},
  author = {S. Weingart and C. Bock and U. Kunze and F. Speck and Th. Seyller and L. Ley},
  journal= {arXiv preprint arXiv:0910.4010},
  year   = {2010}
}

Comments

10 pages, 3 figures

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