Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS2) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van-der-Waals heterostructures using CVD graphene combined with different two-dimensional materials and, on the other hand, can be a route towards a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm2/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS2 by applying a top gate voltage.
@article{arxiv.1706.00422,
title = {Dry transfer of CVD graphene using MoS$_2$-based stamps},
author = {Luca Banszerus and Kenji Watanabe and Takashi Taniguchi and Bernd Beschoten and Christoph Stampfer},
journal= {arXiv preprint arXiv:1706.00422},
year = {2017}
}