We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm2 and are characterized by magneto-transport measurements on SiO2 substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.
@article{arxiv.1611.06199,
title = {Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond},
author = {Timothy J. Lyon and Jonas Sichau and August Dorn and Amaia Zurutuza and Amaia Pesquera and Alba Centeno and Robert H. Blick},
journal= {arXiv preprint arXiv:1611.06199},
year = {2017}
}
Comments
5 pages, 5 figures. Revision includes updated title, figures updated with extra labels and to be compatible with black and white printing, and various minor edits. Added publication information