Mobility in Graphene Double Gate Field Effect Transistors

M. C. Lemme; T. J. Echtermeyer; M. Baus; B. N. Szafranek; J. Bolten; M. Schmidt; T. Wahlbrink; H. Kurz

doi:10.1016/j.sse.2007.10.054

Mobility in Graphene Double Gate Field Effect Transistors

Materials Science 2015-05-13 v1 Mesoscale and Nanoscale Physics

Authors: M. C. Lemme , T. J. Echtermeyer , M. Baus , B. N. Szafranek , J. Bolten , M. Schmidt , T. Wahlbrink , H. Kurz

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Abstract

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.

Keywords

graphene electronic transport field-effect transistors graphene transport and valleytronics

Cite

@article{arxiv.0809.5099,
  title  = {Mobility in Graphene Double Gate Field Effect Transistors},
  author = {M. C. Lemme and T. J. Echtermeyer and M. Baus and B. N. Szafranek and J. Bolten and M. Schmidt and T. Wahlbrink and H. Kurz},
  journal= {arXiv preprint arXiv:0809.5099},
  year   = {2015}
}

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7 pages, 9 figures

Mobility in Graphene Double Gate Field Effect Transistors

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