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A Graphene Field-Effect Device

Mesoscale and Nanoscale Physics 2009-11-13 v1 Materials Science
Authors: M. C. Lemme , T. J. Echtermeyer , M. Baus , H. Kurz
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Abstract

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

Keywords

graphene graphene plasmonics epitaxial graphene

Cite

@article{arxiv.cond-mat/0703208,
  title  = {A Graphene Field-Effect Device},
  author = {M. C. Lemme and T. J. Echtermeyer and M. Baus and H. Kurz},
  journal= {arXiv preprint arXiv:cond-mat/0703208},
  year   = {2009}
}

Comments

12 pages, 3 figures

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