In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained.
@article{arxiv.1207.4443,
title = {Extending ballistic graphene FET lumped element models to diffusive devices},
author = {Giancarlo Vincenzi and G. Deligeorgis and Fabio Coccetti and M. Dragoman and Luca Pierantoni and Davide Mencarelli and R. Plana},
journal= {arXiv preprint arXiv:1207.4443},
year = {2012}
}