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Graphene Field Effect Transistors: Diffusion-Drift Theory

Mesoscale and Nanoscale Physics 2011-02-14 v1
Authors: Gennady I. Zebrev
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Abstract

Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.

Keywords

graphene electronic transport graphene transport and valleytronics graphene

Cite

@article{arxiv.1102.2348,
  title  = {Graphene Field Effect Transistors: Diffusion-Drift Theory},
  author = {Gennady I. Zebrev},
  journal= {arXiv preprint arXiv:1102.2348},
  year   = {2011}
}

Comments

24 pages, 13 figures, a chapter in "Graphene, Theory, Research and Applications", INTECH

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R2 v1 2026-06-21T17:24:56.862Z