Related papers: Graphene Field Effect Transistors: Diffusion-Drift…
We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to…
I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a…
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
We present a formal derivation of a drift-diffusion model for stationary electron transport in graphene, in presence of sharp potential profiles, such as barriers and steps. Assuming the electric potential to have steep variations within a…
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…
Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…