Related papers: Graphene Field Effect Transistors: Diffusion-Drift…
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…
This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at…
We study the the transport properties of multiterminal ballistic graphene samples, concentrating on the conductance matrix, fluctuations and cross-correlations. Far away from Dirac point, the current is carried mostly by propagating modes…
The response function of graphene is calculated in the presence of a constant current across the sample. For small drift velocities and finite chemical potential, analytic expressions are obtained and consequences on the plasmonic…
The main features of the conductivity of doped single layer graphene are analyzed, and models for different scattering mechanisms are presented.
Diffusion and drift of a graphene flake on a graphite surface are analyzed. A potential energy relief of the graphene flake is computed using ab initio and empirical calculations. Based on the analysis of this relief, different mechanisms…
We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice…
This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
The theoretical description for the reflectivity properties of dielectric, metal and semiconductor plates coated with graphene is developed in the framework of the Dirac model. Graphene is described by the polarization tensor allowing the…
Graphene field-effect transistors with Co contacts as source and drain electrodes show anomalous distorted transfer characteristics. The anomaly appears only in short-channel devices (shorter than approximately 3 micrometers) and originates…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
Electron transport and quantum conductance through an armchair graphene and its oxidized graphene- containing form were investigated by the density functional theory (DFT) method and the implementation of the non-equilibrium Green function…
In this review, we provide an account of the recent progress in understanding electronic transport in disordered graphene systems. Starting from a theoretical description that emphasizes the role played by band structure properties and…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…