The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled taking into account the two modes of drain current saturation including drift velocity saturation or electrostatic pinch-off. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. The model allows describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain and cut-off frequency.
@article{arxiv.1112.3856,
title = {Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors},
author = {Gennady I. Zebrev and Alexander A. Tselykovskiy and Daria K. Batmanova and Evgeny V. Melnik},
journal= {arXiv preprint arXiv:1112.3856},
year = {2011}
}