SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
Abstract
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors.
Keywords
Cite
@article{arxiv.1301.0673,
title = {SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor},
author = {Pei Zhao and Randall M. Feenstra and Gong Gu and Debdeep Jena},
journal= {arXiv preprint arXiv:1301.0673},
year = {2013}
}