We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.
@article{arxiv.1503.04147,
title = {Suspended graphene devices with local gate control on an insulating substrate},
author = {Florian R. Ong and Zheng Cui and Muhammet A. Yurtalan and Cameron Vojvodin and Michał Papaj and Jean-Luc F. X. Orgiazzi and Chunqing Deng and Mustafa Bal and Adrian Lupascu},
journal= {arXiv preprint arXiv:1503.04147},
year = {2015}
}