Gate defined zero- and one-dimensional confinement in bilayer graphene

Augustinus; M. Goossens; Stefanie C. M. Driessen; Tim A. Baart; Kenji Watanabe; Takashi Taniguchi; Lieven M. K. Vandersypen

doi:10.1021/nl301986q

Gate defined zero- and one-dimensional confinement in bilayer graphene

Mesoscale and Nanoscale Physics 2013-04-10 v1

Authors: Augustinus , M. Goossens , Stefanie C. M. Driessen , Tim A. Baart , Kenji Watanabe , Takashi Taniguchi , Lieven M. K. Vandersypen

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Abstract

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.

Keywords

graphene bilayers graphene transport and valleytronics graphene

Cite

@article{arxiv.1205.5825,
  title  = {Gate defined zero- and one-dimensional confinement in bilayer graphene},
  author = {Augustinus and M. Goossens and Stefanie C. M. Driessen and Tim A. Baart and Kenji Watanabe and Takashi Taniguchi and Lieven M. K. Vandersypen},
  journal= {arXiv preprint arXiv:1205.5825},
  year   = {2013}
}

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5 pages, 5 figures

Gate defined zero- and one-dimensional confinement in bilayer graphene

Abstract

Keywords

Cite

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