A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

doi:10.1063/1.4922249

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

Mesoscale and Nanoscale Physics 2015-06-29 v1 Quantum Physics

Authors: D. M. Zajac , T. M. Hazard , X. Mi , K. Wang , J. R. Petta

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Abstract

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

Keywords

quantum dots and electron transport quantum gates and qubits silicon quantum computing

Cite

@article{arxiv.1502.01624,
  title  = {A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots},
  author = {D. M. Zajac and T. M. Hazard and X. Mi and K. Wang and J. R. Petta},
  journal= {arXiv preprint arXiv:1502.01624},
  year   = {2015}
}

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