相关论文: THz intersubband electroluminescence from n-type G…

In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional…

We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes ({\mu}LEDs). Current light-voltage measurements reveal that the external quantum efficiency (EQE) behavior versus charge injection does not…

Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their…

We present a sample of 14 hydrogen-rich superluminous supernovae (SLSNe II) from the Zwicky Transient Facility (ZTF) between 2018 and 2020. We include all classified SLSNe with peaks $M_{g}<-20$ mag and with observed \emph{broad} but not…

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active…

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…

In this article we propose a system capable of THz radiation with quantum yield above unity. The system consists of nanoparticles where the material composition varies along the radial direction of each nanoparticle in such a way that a…

Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…

Using our early experimental data on the cascade gamma-transitions from the 162Dy(n,2gamma) reaction, we determined dependence of the cascade intensity on the energy of their intermediate levels, and then - level density and radiatibe…

We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their…

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…

We investigated the electronic and optoelectronic properties of vertical van der Waals heterostructure photodetectors using layered p type GaSe and n type InSe, with graphene as the transparent electrodes. Not only the photocurrent peaks…

We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are…

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…

From the published results of experimental research of 56Fe(n,2gamma) reaction carried out in Budapest, the values of the most probable densities of cascade intermediate levels with 1/2, 3/2 spin and radiative strength functions of cascade…

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs…

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra…

We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QW). In our method, we represent the solution of Schr\"odinger equation for QW potential…

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…

The spectroscopic properties of Tm3+/Yb3+ co-doped silica fibers under excitation at 980 nm are reported. Three distinct up-conversion fluorescence bands were observed in the visible to near infra-red regions. The blue and red fluorescence…