相关论文: Weak antilocalization beyond the fully diffusive r…
We report the magneto-conductivity analysis at different temperatures under magnetic field of up to 5Tesla of a well characterized Bi2Te3 crystal. Details of crystal growth and various physical properties including high linear magneto…
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero…
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…
Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different…
We present a microscopical theory and experimental results concerning resistance resonance in two tunneling coupled quantum wells with different mobilities. The shape of the resonance appears to be sensitive to the small angle scattering…
Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned…
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over…
We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single…
We derive exact quantum expressions for the localization length $L_c$ for weak disorder in two- and three chain tight-binding systems coupled by random nearest-neighbour interchain hopping terms and including random energies of the atomic…
We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…
Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and…
Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…