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Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized…

We study quantum transport in HgTe/HgCdTe quantum wells under the condition that the chemical potential is located outside of the bandgap. We first analyze symmetry properties of the effective Bernevig-Hughes-Zhang Hamiltonian and the…

介观与纳米尺度物理 · 物理学 2014-11-05 I. V. Gornyi , V. Yu. Kachorovskii , A. D. Mirlin , P. M. Ostrovsky

Antimony (Sb), an element with strong spin-orbit coupling, is predicted to undergo a topological phase transition from a topological semimetal to a topological insulator as its dimensionality approaches the two-dimensional limit, driven by…

We have studied the phenomenon of weak localization in multi-quantum-well (MQW) structures in the regime of weak tunneling, when superlattice minibands are not formed. We have calculated the effect of weak localization on conductivity,…

凝聚态物理 · 物理学 2007-05-23 F. G. Pikus , G. E. Pikus

We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum…

材料科学 · 物理学 2009-10-30 J. Oswald , G. Span , A. Homer , G. Heigl , P. Ganitzer , D. K. Maude , J. C. Portal

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based…

介观与纳米尺度物理 · 物理学 2010-11-25 Kunjal V Shah , Dmitry Churochkin , Zivayi Chiguvare , Somnath Bhattacharyya

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…

介观与纳米尺度物理 · 物理学 2019-02-20 T. Khouri , S. Pezzini , M. Bendias , P. Leubner , U. Zeitler , N. E. Hussey , H. Buhmann , L. W. Molenkamp , M. Titov , S. Wiedmann

We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a…

材料科学 · 物理学 2010-02-03 Panagiotis Drouvelis , Giorgos Fagas

Computer simulations with Synopsys' Sentaurus TCAD of opto-electrical characteristics of separate-confinement heterostructure laser based on AlGaAs are used as an example to study the role of the width and depth of Quantum Well (QW) active…

材料科学 · 物理学 2011-12-02 Zbigniew Koziol

We use optimal fluctuation method for a new ballistic $\sigma$-model to study the long time dispersion of conductance $G(t)$ of a mesoscopic sample. In the long time limit the conductance of a $d$-dimensional sample decays as $\exp (-A…

凝聚态物理 · 物理学 2016-08-31 B. A. Muzykantskii , D. E. Khmelnitskii

We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…

介观与纳米尺度物理 · 物理学 2015-06-24 Wenmin Yang , Shuo Yang , Qinghua Zhang , Yang Xu , Shipeng Shen , Jian Liao , Jing Teng , Cewen Nan , Lin Gu , Young Sun , Kehui Wu , Yongqing Li

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…

介观与纳米尺度物理 · 物理学 2012-12-07 M. M. Uddin , H. W. Liu , K. F. Yang , K. Nagase , T. D. Mishima , M. B. Santos , Y. Hirayama

We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…

介观与纳米尺度物理 · 物理学 2009-11-07 G. Schwiete , D. Taras-Semchuk , K. B. Efetov

We investigate Ag(100) thin films epitaxially grown on a Fe(100) substrate using a low-temperature scanning tunneling microscope. Fabrication of a wedge structure by evaporating Ag through a shadow mask allows us to observe systematic…

介观与纳米尺度物理 · 物理学 2015-04-01 Takashi Uchihashi , Tomonobu Nakayama

This paper considers certain materials, including topological insulators, where spin rotation symmetry is broken much more strongly than time reversal symmetry. When these materials are in the diffusive regime, i.e. when they have disorder…

介观与纳米尺度物理 · 物理学 2022-10-25 Vincent Sacksteder

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 \AA wide QW. Our calculations of strain and quantum confinement for…

介观与纳米尺度物理 · 物理学 2008-09-29 S. Dasgupta , S. Birner , C. Knaak , M. Bichler , A. Fontcuberta i Morral , G. Abstreiter , M. Grayson

Many exotic physics anticipated in topological insulators require a gap to be opened for their topologica surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however…

介观与纳米尺度物理 · 物理学 2016-04-27 Guolin Zheng , Ning Wang , Jiyong Yang , Weike Wang , Haifeng Du , Wei Ning , Zhaorong Yang , Hai-Zhou Lu , Yuheng Zhang , Mingliang Tian

We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well…

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