相关论文: Accuracy of Y-function methods for parameters extr…

There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic…

We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We…

The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic…

We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the…

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the…

Transport properties of 2D materials especially close to their boundary has received much attention after the successful fabrication of graphene and other fascinating materials afterwards. While most previous work is devoted to the…

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

To establish the presence and orientation of the proposed striped phase in ultra-high mobility 2D electron systems at filling factor 9/2, current path transport properties are determined by varying the separation and allignment of current…

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…

We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…

We generalize previous studies on constraining operators of the Standard Model Effective Field Theory using Drell-Yan (DY) measurements to include at the same time all relevant operators and uncertainties. It has been shown that fully…

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The…

We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson…

We consider the asymptotic behaviour of the effective thermal conductivity of a two-phase composite obtained by introducing into an infinite homogeneous matrix a periodic set of inclusions of a different material and of size proportional to…

We study the charge transport across a band-tuned metal-insulator transition in two dimensions. For high temperatures $T$ and chemical potentials $\mu$ far from the transition point, conduction is ballistic and the resistance $R(T)$…

This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs).…

We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…

Density Functional Theory has long struggled to obtain the exact exchange-correlational (XC) functional. Numerous approximations have been designed with the hope of achieving chemical accuracy. However, designing a functional involves…