相关论文: Contact resistance extraction of graphene FET tech…
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
The electrical characterisation of graphene, either in plane sheets or in properly geometrised form can be approached using non-contact methods already employed for thin film materials. The extraordinary thinness (and, correspondingly, the…
The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting…
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus…