相关论文: Charge-based Modeling of Ultra Narrow Cylindrical …

In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge…

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction…

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…

We study nanoelectromechanical resonators fabricated from suspended flakes of NbSe$_2$ (thickness$\sim$30-50 nm) to probe charge density wave (CDW) physics at nanoscale. Variation of elastic and electronic properties accompanying the CDW…

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…

This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a…

A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…

We discuss the first theory for the depinning of low dimensional, incommensurate, charge density waves (CDWs) in the strong electron-phonon (e-p) regime. Arguing that most real CDWs systems invariably develop a gigantic dielectric constant…

Superconducting weak-link (WL), behaving like a Josephson junction (JJ), is fundamental to many superconducting devices such as nanoSQUIDs, single-photon detectors, and bolometers. The interplay between unique nonlinear dynamics and…

A model is presented for the quantum transport of electrons, across finite atomic wire nanojunctions between electric leads, at zero bias limit. In order to derive the appropriate transmission and reflection spectra, familiar in the…

We study the fixed point of the three-dimensional NJL model in a double-scaling limit where both the charge $Q$ and the number of fermion flavors $N$ become large with a fixed ratio $q=Q/(2N)$. While a similar analysis has been performed…

Energetics and conductance in jellium modelled nanowires are investigated using the local-density-functional-based shell correction method. In analogy with studies of other finite-size fermion systems, e.g., simple-metal clusters or He-3…

Controlling nonlinear effects in micro- and nano-electro-mechanical systems is essential for unlocking their full potential in sensing, signal processing, and frequency control. In this study, we develop a voltage-dependent Hamiltonian…