相关论文: Properties of Al2O3 thin films deposited on 4H-SiC…

We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…

We have investigated transport properties of CrO2 thin films deposited on TiO2 and sapphire substrates. The films are good metals down to low temperatures. The residual resistivity is of the order of 6 micro-ohhmcm for films deposited on…

We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator…

This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h.…

The structures, optical and electrical transport properties of SnO$_2$ films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of…

Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the…

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

Co and CoO thin films were deposited by magnetron sputtering in the form of multilayers. They were irradiated with Ar and Si ion beams of different energies and fluences. The magnetic properties were investigated.

We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for…

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room…

The optical properties of thin films of intermetallic Au$_{3}$Hf were experimentally investigated for the first time, which display clear plasmonic properties in the optical and near infrared region with negative permittivity. In contrast…

SrTiO$_{3}$ is one of the most popular insulating single-crystal substrates for various complex-oxide thin film growths, because of its good lattice match with many complex oxide films. Here, we show that a common thin film processing…

Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 {\deg}C. XRD showed three different crystal structures depending on V-metal fraction in the…

Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…

We use room temperature ion beam assisted sputtering (IBAS) to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures,…

We report on the superconducting properties of molybdenum nitride thin films grown by reactive DC sputtering at room temperature with a N2:Ar mixture. Thin films grown using 5 % N2 concentration display Tc = 8 K, which is gradually reduced…

To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This…

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…

Hafnium dioxide, also known as hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal operating…