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相关论文: First-Principle Study of Phosphine Adsorption on S…

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The adsorption of PBr3 on the Si(100)-2$\times$1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and…

材料科学 · 物理学 2025-10-24 Vladimir M. Shevlyuga , Yulia A. Vorontsova , Tatiana V. Pavlova

Several dissociated and two non-dissociated adsorption structures of the phenol molecule on the Si(001)-(2 \times 1) surface are studied using density functional theory with various exchange and correlation functionals. The relaxed…

计算物理 · 物理学 2015-05-19 Karen Johnston , Andris Gulans , Tuukka Verho , Martti J. Puska

For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here we studied the interaction of a…

材料科学 · 物理学 2023-11-30 T. V. Pavlova , V. M. Shevlyuga

The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by…

凝聚态物理 · 物理学 2009-11-07 L. Oberbeck , N. J. Curson , M. Y. Simmons , R. Brenner , A. R. Hamilton , S. R. Schofield , R. G. Clark

We study the stability and electronic properties of intrinsic point defects, vacancy and self-interstitial, in mono- and bi-layer phosphorene. We calculate the formation energies, quasiparticle defect states and charge transition levels…

材料科学 · 物理学 2020-07-01 Sudipta Kundu , Mit H. Naik , Manish Jain

We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P…

材料科学 · 物理学 2007-05-23 N. J. Curson , S. R. Schofield , M. Y. Simmons , L. Oberbeck , J. L. O'Brien , R. G. Clark

The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impurities. The most accurate approach employs scanning…

材料科学 · 物理学 2025-10-20 T. V. Pavlova

We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We…

材料科学 · 物理学 2017-09-13 Richard L. Smith , David R. Bowler

In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon…

The homoepitaxial growth of Si on Si(100) covered by a resist mask is a necessary technological step for the fabrication of donor-based quantum devices with scanning tunneling microscope lithography. In the present work, the chlorine…

应用物理 · 物理学 2019-08-02 T. V. Pavlova , E. S. Skorokhodov , G. M. Zhidomirov , K. N. Eltsov

First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Cs adsorption on the Si(001) surface for 0.5 and 1 ML coverages. We found that the saturation…

强关联电子 · 物理学 2007-05-23 R. Shaltaf , E. Mete , S. Ellialtioglu

In the present work, we study the structures and molecular geometries of $CH_{4}$, $SO_{2}$ and $O_{2}$ adsorbed on $Cr_{2}O_{3}(0001)$. Using computational calculations based on the density functional theory (DFT), we analyze the most…

化学物理 · 物理学 2016-12-05 S. N. Hernández Guiance , D. Coria , I. M. Irurzun , E. E. Mola

The role of ionic interactions between sodium dodecyl sulfate, SDS, and sapphire surfaces have been studied using specular neutron reflection to determine the structure and composition of adsorbed surfactant layers. Increasing the pH of the…

软凝聚态物质 · 物理学 2012-05-02 Ningning Li , Robert K. Thomas , Adrian R. Rennie

Ab initio calculations within the density-functional theory formalism are performed to investigate the chemical functionalization of a graphene-like monolayer of silicon - silicene - with B, N, Al or P atoms. The structural, electronic,…

材料科学 · 物理学 2014-09-05 Jozef Sivek , Hasan Şahin , Bart Partoens , François M. Peeters

A lattice gas model is used to study the equilibrium properties and desorption kinetics of CO on Ru(0001). With interactions obtained from density functional theory (DFT) the phase diagram and temperature programmed desorption (TPD) spectra…

统计力学 · 物理学 2007-05-23 J. -S. McEwen , A. Eichler

The adsorption of single atoms on pristine and defected hexagonal boron nitride (h-BN) was systematically investigated using density functional theory. Elements from the first three rows of the periodic table, together with selected…

材料科学 · 物理学 2026-02-04 Ana S. Dobrota , Natalia V. Skorodumova , Igor A. Pašti

Scalar-relativistic DFT-GGA has been used to study adsorption of water in molecular and dissociative configurations on delta-Plutonium (111) surface. In molecular state, water is physisorbed in an almost flat-lying orientation at a one-fold…

材料科学 · 物理学 2009-11-13 Raymond Atta-Fynn , Asok K. Ray

We explore the combined impact of sulfur vacancies and electronic interactions on the optical properties of monolayer MoS$_2$. First, we present a generalized Anderson-Hubbard Hamiltonian that accounts for both randomly distributed sulfur…

无序系统与神经网络 · 物理学 2018-06-06 C. E. Ekuma , D. Gunlycke

The first principles density functional theory (DFT) calculations have been used to investigate the atomic and electronic properties of thiadiazole adsorption on the Si(001) surface. A (2x2) reconstructed clean substrate surface has been…

材料科学 · 物理学 2018-05-07 Cagil Kaderoglu

Phosphorene, a two-dimensional (2D) monolayer of black phosphorus, has attracted considerable theoretical interest, although the experimental realization of monolayer, bilayer, and few-layer flakes has been a significant challenge. Here we…

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