相关论文: Local excitons in silicon induced by SiGe quantum …
Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…
We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {\it DX} centers. The excitation mechanism of the {\it DX} centers into their shallow donor…
Excitons are key quasiparticles determining the optical properties of solids. As such, they can be utilized to coherently control the electronic structure of materials using optical femtosecond pulses. Identifying the decoherence mechanism…
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state…
An ensemble of quantum dot excitons may be used for coherent information manipulation. Due to the ensemble inhomogeneity any optical information retrieval occurs in form of a photon echo. We show that the inhomogeneity can lead to a…
Realizing direct-bandgap quantum dots working within the deep-ultraviolet frequency is highly desired for electro-optical and biomedical applications while remaining challenging. In this work, we combine the first-principles many-body…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the…
We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe…
We propose a new formalism and an effective computational framework to study self-trapped excitons (STE) in insulators and semiconductors from first principles. Using the many-body Bethe-Salpeter equation in combination with perturbation…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Excitons, which represent a type of quasi-particles consisting of electron-hole pairs bound by the mutual Coulomb interaction, were often observed in lowly-doped semiconductors or insulators. However, realizing excitons in the…
The cubic $Ia\bar{3}$ (BC8) and tetragonal $P4_32_12$ (ST12) high pressure modifications of Si and Ge are attractive candidates for applications in optoelectronic, thermoelectric or plasmonic devices. Si$_x$Ge$_{1-x}$ alloys in BC8/ST12…
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
The concept of \textit{optical} exciton - a photo-excited bound electron-hole pair within a crystal - is routinely used to interpret and model a wealth of excited-state phenomena in semiconductors. Beside originating sub-band gap signatures…