Two-photon absorption in silicon using real density matrix approach
Optics
2024-05-16 v2
Abstract
Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials, and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.
Cite
@article{arxiv.2403.01019,
title = {Two-photon absorption in silicon using real density matrix approach},
author = {David Ziemkiewicz and David Knez and Evan P. Garcia and Sylwia Zielińska-Raczyńska and Gerard Czajkowski and Alessandro Salandrino and Sergey S. Kharintsev and Aleksei I. Noskov and Eric O. Potma and Dmitry A. Fishman},
journal= {arXiv preprint arXiv:2403.01019},
year = {2024}
}