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相关论文: A simple test for ideal memristors

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Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. K. Wong , A. B. Pakhomov , S. T. Hung , S. G. Yang , C. Y. Wong

Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…

材料科学 · 物理学 2013-06-10 Gaurav Gandhi , Varun Aggarwal

Memristors close the loop for I-V characteristics of the traditional, passive, semi-conductor devices. Originally proposed in 1971, the hunt for the memristor has been going ever since. The key feature of a memristor is that its current…

神经与进化计算 · 计算机科学 2022-03-30 Alexander E. Beasley , Mohammed-Salah Abdelouahab , René Lozi , Anna L. Powell , Andrew Adamatzky

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write…

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…

Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases,…

新兴技术 · 计算机科学 2016-05-18 Tianshi Wang , Jaijeet Roychowdhury

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

材料科学 · 物理学 2016-11-15 Ella Gale

There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the…

材料科学 · 物理学 2013-08-07 E. S. Demidov

It is rigorously proved that ideal memcapacitors and meminductors are not passive or lossless devices, nor are they satisfying the weaker notion of cyclo-passivity, which arises when dropping the requirement of non-negativity of the storage…

系统与控制 · 电气工程与系统科学 2020-10-08 Dimitri Jeltsema , Arjan van der Schaft

Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…

仪器与探测器 · 物理学 2021-05-19 T. Hennen , E. Wichmann , A. Elias , J. Lille , O. Mosendz , R. Waser , D. J. Wouters , D. Bedau

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

Quantum computer technology harnesses the features of quantum physics for revolutionizing information processing and computing. As such, quantum computers use physical quantum gates that process information unitarily, even though the final…

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…

This paper presents the effectiveness of various stress conditions (mainly voltage and frequency) on detecting the resistive shorts and open defects in deep sub-micron embedded memories in an industrial environment. Simulation studies on…

硬件体系结构 · 计算机科学 2011-11-09 Ananta K. Majhi , Mohamed Azimane , Guido Gronthoud , Maurice Lousberg , Stefan Eichenberger , Fred Bowen

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

应用物理 · 物理学 2025-02-06 N Vasileiadis , P Loukas , A Mavropoulis , P Normand , I Karafyllidis , G Ch Sirakoulis , P Dimitrakis

The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…

新兴技术 · 计算机科学 2022-05-18 Lijie Xie , Jiawei Shen , Andrea Mifsud , Chaohan Wang , Abdulaziz Alshaya , Christos Papavassiliou

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

介观与纳米尺度物理 · 物理学 2016-12-21 Cheng-Chih Hsieh , Anupam Roy , Yao-Feng Chang , Davood Shahrjerdi , Sanjay K. Banerjee

Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…

新兴技术 · 计算机科学 2015-06-23 Tejinder Singh

The memristance of a memristor depends on the amount of charge flowing through it and when current stops flowing through it, it remembers the state. Thus, memristors are extremely suited for implementation of memory units. Memristors find…

神经与进化计算 · 计算机科学 2022-10-28 Udit Kumar Agarwal , Shikhar Makhija , Varun Tripathi , Kunwar Singh