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相关论文: A simple test for ideal memristors

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Rapidly developing experiments across multiple platforms now aim to realise small quantum codes, and so demonstrate a memory within which a logical qubit can be protected from noise. There is a need to benchmark the achievements in these…

量子物理 · 物理学 2018-02-27 Xiaosi Xu , Niel de Beaudrap , Joe O'Gorman , Simon C. Benjamin

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although…

新兴技术 · 计算机科学 2014-02-18 Ella Gale , Ben de Lacy Costello , Victor Erokhin , Andrew Adamatzky

Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and…

新兴技术 · 计算机科学 2019-09-18 Y. V. Pershin

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…

新兴技术 · 计算机科学 2022-06-14 Yuvraj Misra , Tarun Kumar Agarwal

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…

最优化与控制 · 数学 2025-07-22 H. M. Heidema , H. J. van Waarde , B. Besselink

Robust qubit memory is essential for quantum computing, both for near-term devices operating without error correction, and for the long-term goal of a fault-tolerant processor. We directly measure the memory error $\epsilon_m$ for a…

Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…

应用物理 · 物理学 2024-09-17 Agustin Bou , Cedric Gonzales , Pablo P. Boix , Antonio Guerrero , Juan Bisquert

The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…

介观与纳米尺度物理 · 物理学 2017-01-17 Y. V. Pershin , S. N. Shevchenko

Memristor (resistor with memory), inductor with memory (meminductor) and capacitor with memory (memcapacitor) have different roles to play in novel computing architectures. We found that a coil with a magnetic core is an inductor with…

新兴技术 · 计算机科学 2025-12-15 Frank Zhigang Wang

This short note clarifies that the "pinched hysteresis loop" fingerprint of a memristor, or a memristive device, must hold for all amplitudes, for all frequencies, and for all initial conditions, of any periodic testing waveform, such as…

介观与纳米尺度物理 · 物理学 2012-03-01 Hyongsuk Kim , Maheshwar Pd. Sah , Shyam Prasad Adhikari

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

Memristors are expected to form a major cornerstone in the upcoming renaissance of analog computing, owing to their very small spatial footprint and low power consumption. Due to the nature of their structure and operation, the response of…

介观与纳米尺度物理 · 物理学 2023-02-17 Roland Konlechner , Anis Allagui , Vladimir N. Antonov , Dmitry Yudin

Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) vM--iM characteristic for…

系统与控制 · 电气工程与系统科学 2019-09-02 Jean-Marc Ginoux , Riccardo Meucci , Stefano Euzzor , Angelo Di Garbo

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

应用物理 · 物理学 2018-11-27 H. Nili , A. Vincent , M. Prezioso , M. R. Mahmoodi , I. Kataeva , D. Strukov

Recent advancements in reservoir computing research have created a demand for analog devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy…

A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small…

新兴技术 · 计算机科学 2017-03-02 Mahyar Shahsavari , Pierre Boulet

While the size of functional elements in memristors becomes of the orders of nano-meters or even smaller, the quantum effects in their dynamics can significantly influence their transport properties, consistent with recent experimental…

介观与纳米尺度物理 · 物理学 2023-03-22 C Huggins , S Savel'ev , A Balanov , A Zagoskin

A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated…

量子物理 · 物理学 2020-02-18 Tasio Gonzalez-Raya , Joseph M. Lukens , Lucas C. Céleri , Mikel Sanz

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…

计算物理 · 物理学 2023-03-14 Samuel Aldana , Jakub Jadwiszczak , Hongzhou Zhang

Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…

新兴技术 · 计算机科学 2012-12-17 Victor Erokhin , Gerard David Howard , Andrew Adamatzky