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The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…

介观与纳米尺度物理 · 物理学 2017-07-14 Jieun Lee , Kin Fai Mak , Jie Shan

We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either…

介观与纳米尺度物理 · 物理学 2015-01-21 Wen-Yu Shan , Jianhui Zhou , Di Xiao

The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…

介观与纳米尺度物理 · 物理学 2017-09-19 Nicolas Ubrig , Sanghyun Jo , Marc Philippi , Davide Costanzo , Helmuth Berger , Alexey B. Kuzmenko , Alberto F. Morpurgo

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons…

Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…

介观与纳米尺度物理 · 物理学 2015-06-19 Kin Fai Mak , Kathryn L. McGill , Jiwoong Park , Paul L. McEuen

We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…

介观与纳米尺度物理 · 物理学 2020-02-07 Akihiko Sekine , Allan H. MacDonald

We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…

介观与纳米尺度物理 · 物理学 2015-04-21 M. Tahir , A. Manchon , U. Schwingenschlogl

We report on novel valley acoustoelectric effect, which can arise in a 2D material, like a transition metal dichalcogenide monolayer, residing on a piezoelectric substrate. The essence of this effect lies in the emergence of a drag electric…

介观与纳米尺度物理 · 物理学 2019-06-27 A. V. Kalameitsev , V. M. Kovalev , I. G. Savenko

Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…

介观与纳米尺度物理 · 物理学 2024-12-30 Zhichao Zhou , Ruijing Fang , Zhen Zhang , Xiaoyu Wang , Jiayan Rong , Xiao Li

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion…

介观与纳米尺度物理 · 物理学 2020-10-21 Fei Xue , V. P. Amin , P. M. Haney

For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer…

介观与纳米尺度物理 · 物理学 2019-04-23 Zumeng Huang , Yuanda Liu , Kévin Dini , Zhuojun Liu , Hanlin Fang , Jin Liu , Timothy Liew , Weibo Gao

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…

材料科学 · 物理学 2020-02-13 He Hu , Wen-Yi Tong , Yu-Hao Shen , Xiangang Wan , Chun-Gang Duan

Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…

介观与纳米尺度物理 · 物理学 2022-09-22 Chongyun Jiang , Abdullah Rasmita , Hui Ma , Qinghai Tan , Zumeng Huang , Shen Lai , Sheng Liu , Xue Liu , Qihua Xiong , Wei-bo Gao

Diffusion currents are theoretically examined in two-dimensional Dirac materials, such as those of the transition metal dichalcogenides (TMD) family. The transversal effects are analogues of the valley Hall (VHE) and photogalvanic (PGE)…

介观与纳米尺度物理 · 物理学 2023-03-01 A. V. Snegirev , V. M. Kovalev , M. V. Entin

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…

介观与纳米尺度物理 · 物理学 2020-07-02 Hui-Ying Mu , Yi-Tong Yao , Jie-Ru Li , Guo-Cai Liu , Chao He , Ying-Jie Sun , Guang Yang , Xing-Tao An , Yong-Zhe Zhang , Jian-Jun Liu

The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…

介观与纳米尺度物理 · 物理学 2014-09-16 Hongtao Yuan , Xinqiang Wang , Biao Lian , Haijun Zhang , Xianfa Fang , Bo Shen , Gang Xu , Yong Xu , Shou-Cheng Zhang , Harold Y. Hwang , Yi Cui

Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

其他凝聚态物理 · 物理学 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…

介观与纳米尺度物理 · 物理学 2023-11-14 Chumki Nayak , Suvadip Masanta , Sukanya Ghosh , Shubhadip Moulick , Atindra Nath Pal , Indrani Bose , Achintya Singha

Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…

介观与纳米尺度物理 · 物理学 2013-02-11 E. H. Hwang , S. Das Sarma
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