相关论文: Anomalous Scaling Exponents of Capacitance-Voltage…
We report a charge based model to establish the analytical equation, describing the nature of capacitance-voltage ($C$-$V$) characteristics of organic solar cells under dark condition (or organic diodes) over a wide range of voltage,…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity…
Despite the remarkable progress in emerging solar cell technologies such as hybrid organic-inorganic perovskites, there are still significant limitations related to the stability of the devices and their non-ideal electrical behavior under…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
Cyclic voltammetry (CV) is a powerful technique for characterizing electrochemical properties of electrochemical devices. During charging-discharging cycles, thermal effect has profound impact on its performance, but existing theoretical…
This work re-defines the well-known C/V (capacitance-voltage) measurement technique, in the view of a new physics formula, discovered in 2006 by the same author.
The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured…
Capacitance measurements as a function of voltage, frequency and temperature are useful tools to identify fundamental parameters that affect solar cell operation. Techniques such as capacitance-voltage (CV), Mott-Schottky analysis and…
We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with…
The effects of thickness, doping concentration and recombination of AlSb films on the performance of CdS/AlSb cells are simulated by one dimensional simulation program called analysis of microelectronic and photonic structures(AMPS1D) soft…
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive…
The current-voltage (I-V) characteristics of various MgB2 films have been studied at different magnetic fields parallel to c-axis. At fields \mu0H between 0 and 5T, vortex liquid-glass transitions were found in the I-V isotherms.…
A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that…
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the…
Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes…
Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…
Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform…
Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high…
We extract the vortex lattice parameters using low-frequency two-coil mutual inductance measurements in a 20-nm-thick superconducting a-MoGe thin film. We fit the temperature dependence of ac penetration depth in the mixed state using a…