相关论文: Stress modulated optical spin-injection in bulk se…
In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge…
We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection…
We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection…
We present spin-resolved measurements of the local density of states in Si doped GaAs. Both spin components exhibit strong mesoscopic fluctuations. In the magnetic quantum limit, the main features of the spin-up and spin-down components of…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a…
The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak decreases rapidly below Ef in Ni, but not in…
Frequent polarization reversals, or spin-flips, of a stored polarized beam in a high energy scattering asymmetry experiments may greatly reduce systematic errors of spin asymmetry measurements. A spin-flipping technique is being developed…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
We report that spin polarization occurs over millimeters in polycrystalline bulk samples of chiral disilicide NbSi$_2$ and TaSi$_2$. As previously demonstrated in the experiments using single crystals of NbSi$_2$ and TaSi$_2$, electrical…
Associated with spin-orbit coupling (SOC) and inversion symmetry breaking, Rashba spin polarization opens a new avenue for spintronic applications that was previously limited to ordinary magnets. However, spin polarization effects in actual…
We theoretically describe the phenomenon of non-adiabatic spin dynamics, which occurs in a gas cell filled by alkali vapor in presence of a strong alternating magnetic field and pump light. Steep increase of the spin polarization occurs if…
In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…
The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is…
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization,…
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also…
Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first…