相关论文: Stress modulated optical spin-injection in bulk se…

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…

We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the…

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized…

Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical…

We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the…

Semiconductor Bloch equations, which microscopically describe the dynamics of a Coulomb interacting, spin-unpolarized electron-hole plasma, can be solved in two limits: the coherent and the quasi-equilibrium regime. These equations have…

We point out in this short communique, that be it a s-wave or d-wave superconductor, in a non equalibrium situation(i.e. in presence of excess unpolarised/polarised quasi-particles maintained by an injection current) the superconducting gap…

Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {\mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well…

Due to fundamental interest and potential applications in quantum computation, tremendous efforts have been invested to study topological superconductivity. However, bulk topological superconductivity seems to be difficult to realize and…

We have calculated the dynamical polarization, plasmons and damping rates in semi-Dirac bands (SDB's) with zero band gap and half-linear, half-parabolic low-energy spectrum. The obtained plasmon dispersions are strongly anisotropic and…

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic…

We optically generate electron spins in semiconductors and apply an external magnetic field perpendicularly to them. Time-resolved photoluminescence measurements, pumped with a circularly polarized light, are performed to study the spin…

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…

The local spin polarisation (LSP) of electrons in two typical semiconductor nanowires under the modulation of Rashba spin-orbit interaction (SOI) is investigated theoretically. The influence of both the SOI- and structure-induced bound…

We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the…

In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin-charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel…

An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were not affected by spin…

The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…

A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…

We report measurements of enhanced tensor polarization on solid-state targets. The results here represent an increase in tensor polarization over that previously achieved in high energy and nuclear scattering experiments that focused on the…