相关论文: Stress modulated optical spin-injection in bulk se…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a…
It is argued that the stress caused by vortex cores in the mixed state of superconductors may result in a field dependent contribution to the free energy and magnetization of measurable levels. For sufficiently strong stress dependence of…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…
We study the spin polarization of the electrons on the surface of topological insulators under a dc electric field or a circularly polarized light by using Keldysh Green's function formalism. When a dc electric field $E_x \sim 10^{3} {\rm…
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing…
We report on noise-induced-spin-ordering in a collective quasipaticle system: spinor stochastic resonance. Synergetic interplay of a polarization-modulated signal and a polarization-noise allows us to switch coherently between the two…
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
The effect of spin polarization, induced by the difference in concentration of spin-up and spin-down electrons produced under the influence of a magnetic field, on lattice ion vibrationselectron wave interactions, and the resulting…
The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase…
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
In an inhomogeneously doped magnetic semiconductor spin relaxation time T_1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p-n junction gives rise to the spin-voltaic effect where the…
Electrical control of magnetization is of crucial importance for integrated spintronics devices. Spin-orbit torques (SOT) in heavy-metal/ferromagnetic heterostructures have emerged as promising tool to achieve efficiently current-induced…