相关论文: III-V Tri-Gate Quantum Well MOSFET: Quantum Ballis…

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we…

Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…

There is increasing interest in the development of gate-based quantum circuits for the training of machine learning models. Yet, little is understood concerning the parameters of circuit design, and the effects of noise and other…

Quantum mechanical problems are among the hardest to simulate and, in some cases, remain intractable even for the most powerful computers. Quantum computing has emerged as a new technological platform to address such challenges, with rapid…

Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate…

Gate set tomography (GST) provides precise, self-consistent estimates of the noise channels for all of a quantum processor's logic gates. But GST experiments are large, involving many distinct quantum circuits. This has prevented their use…

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are…

We experimentally investigate the viability of a variational quantum gate optimization protocol informed by the underlying physical Hamiltonian of fixed-frequency transmon qubits. The utility of the scheme is demonstrated through the…

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…

Cloud-accessible quantum processors enable direct execution of quantum algorithms on heterogeneous hardware platforms. Unlike classical systems, however, identical quantum circuits may exhibit substantially different behavior across devices…

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…

While all quantum algorithms can be expressed in terms of single-qubit and two-qubit gates, more expressive gate sets can help reduce the algorithmic depth. This is important in the presence of gate errors, especially those due to…

Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…

Quantum circuit simulation is crucial for the development of quantum algorithms, particularly given the high cost and noise limitations of physical quantum hardware. While full-state quantum circuit simulation is commonly employed for…

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…

We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm. Such simulations go far beyond what is typically…

The effective use of current Noisy Intermediate-Scale Quantum (NISQ) devices is often limited by the noise which is caused by interaction with the environment and affects the fidelity of quantum gates. In transmon qubit systems, the quantum…

The effect of stress-triaxiality on growth of a void in a three dimensional single-crystal face-centered-cubic (FCC) lattice has been studied. Molecular dynamics (MD) simulations using an embedded-atom (EAM) potential for copper have been…