相关论文: Quantum Interference in Silicon 1D Quasi-Ballistic…
Purpose: We aim to investigate the role of a few neutron transfer channels on the dynamics of fusion reactions around the Coulomb barrier by judicially selecting 11 different $^{28,30}$Si-induced systems. These reactions are chosen in such…
Multiwalled carbon nanotubes are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. These experiments follow and extend the original experiments by Frank et al (Science, 280 1744…
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are…
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…
We demonstrate that a high kinetic inductance disordered superconductor can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance ($R_Q = h/4e^2 \simeq 6.5k\Omega$). This…
A model is presented for two-dimensional superconductivity at semiconductor-on-metal interfaces mediated by Coulomb interactions between electronically-active interface charges in the semiconductor and screening charges in the metal. The…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
We present experimental results and a model to solve the problem of "in-phase Coulomb peaks" observed in transport through a quantum dot. In a marginal region between Coulomb-blockade and open-dot, we have observed Fano-type interference…
The quantum interference and orbital filling effects on the thermoelectric (TE) properties of quantum dot molecules with high figure of merit are illustrated via the full solution to the Hubbard- Anderson model in the Coulomb blockade…
We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to…
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the…
We study the low temperature thermodynamic properties of a superconducting double-island qubit. For an odd number of electrons in the device, the ground state corresponds to the intrinsic quasiparticle bound to the tunneling contact. The…
The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are found, corresponding to three $s$ bands crossing the Fermi…
The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge…
Optical measurements of the real and imaginary frequency dependent conductivity of uncompensated n-type silicon are reported. The experiments are done in the quantum limit, $ \hbar\omega > k_{B}T$, across a broad doping range on the…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
Based on the self-consistent $T$-matrix approximation, the quantum interference (QI) effect is studied with the diagrammatic technique in weakly-disordered two-dimensional crystals with nearly half-filled bands. In addition to the usual…
We study the transport through a molecular junction exhibiting interference effects. We show that these effects can still be observed in the presence of molecular vibrations if Coulomb repulsion is taken into account. In the Kondo regime,…
We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are…