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Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…

介观与纳米尺度物理 · 物理学 2014-05-01 Fei-Xiang Xiang , Xiao-Lin Wang , Shi-Xue Dou

Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases…

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is…

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi2Se3 are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the…

材料科学 · 物理学 2023-06-07 Bowen Hou , Dan Wang , Bradford A. Barker , Diana Y. Qiu

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

介观与纳米尺度物理 · 物理学 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…

材料科学 · 物理学 2024-09-02 Sumana Paul , Moumita Das , Sujoy Datta , Raja Chakraborty , Prabhat Mandal , P. K. Giri

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…

We study theoretically by a quantum-mechanical approach the general scattering problem of a straight step defect on the surface of topological insulator $\mathrm{Bi}_{2}\mathrm{Te}_{3}$ with strong warping effect. At high energy where the…

介观与纳米尺度物理 · 物理学 2012-10-24 Jin An , C. S. Ting

We propose a general theory on the standing waves (quasiparticle interference pattern) caused by the scattering of surface states off step edges in topological insulators, in which the extremal points on the constant energy contour of…

介观与纳米尺度物理 · 物理学 2012-07-26 Jing Wang , Wei Li , Peng Cheng , Canli Song , Tong Zhang , Peng Deng , Xi Chen , Xucun Ma , Ke He , Jin-Feng Jia , Qi-Kun Xue , Bang-Fen Zhu

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the…

介观与纳米尺度物理 · 物理学 2015-05-14 Tong Zhang , Peng Cheng , Xi Chen , Jin-Feng Jia , Xucun Ma , Ke He , Lili Wang , Haijun Zhang , Xi Dai , Zhong Fang , Xincheng Xie , Qi-Kun Xue

We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi$_2$Te$_3$. By using angle-resolved photoemission, we were able to show that the…

材料科学 · 物理学 2017-04-04 Katharina Höfer , Christoph Becker , Steffen Wirth , Liu Hao Tjeng

Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…

介观与纳米尺度物理 · 物理学 2010-12-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission…

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle…

The low-energy band-structure of electrons propagating on a lateral surface of a heterostructure consisting of three dimensional topological insulator (TI) and magnetic insulator layers has been calculated. The energy spectrum is highly…

介观与纳米尺度物理 · 物理学 2015-06-22 A. G. Mal'shukov

The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide…

Spin polarization of a topological surface state for GeBi$_2$Te$_4$, the newly discovered three-dimensional topological insulator, has been studied by means of the state of the art spin- and angle-resolved photoemission spectroscopy. It has…

The topological insulators represent a unique state of matter where the bulk is insulating with an energy gap while the surface is metallic with a Dirac cone protected by the time reversal symmetry. These characteristics provide a venue to…

A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator…

材料科学 · 物理学 2020-05-28 Md. Asif Afzal , S. H. Naqib

Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy…