相关论文: Electric control of the bandgap in quantum wells w…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates…
We consider theoretically a closed (zero-dimensional) semiconductor microcavity where confined vacuum photonic mode is coupled to electrons in valence band of the semiconductor. It is shown that vacuum-induced virtual electron transitions…
Quantum control of the wave function of two interacting electrons confined in quasi-one-dimensional double-well semiconductor structures is demonstrated. The control strategies are based on the knowledge of the energy spectrum as a function…
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics,…
We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected…
We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance…
Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum…
Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and…
We employ magnetocapacitance and far-infrared spectroscopy techniques to study the spectrum of the double-layer electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. For gate-bias-controlled asymmetric…
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth…
We investigate theoretically the PbTe/PbSnTe heterostructure grown in [111] direction, specifically a quantum wall (potential step of width d) of PbTe embedded in Pb_{1-x}Sn_{x}Te. For x large enough to lead to band inversion, and for large…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
The robustness of quantum edge transport in InAs/GaSb quantum wells in the presence of magnetic fields raises an issue on the fate of topological phases of matter under time-reversal symmetry breaking. A peculiar band structure evolution in…
The double-well problem for the two-dimensional Dirac equation is solved for a family of quasi-one-dimensional potentials in terms of confluent Heun functions. We demonstrate that for a double well separated by a barrier, both the energy…
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and Hall effect over a wide…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
We identify carrier scattering at densities below which it has previously been observed in semiconductor quantum wells. These effects are evident in the peakshapes of 2D double-quantum spectra, which change as a function of excitation…