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The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic…

Transferring graphene flakes onto hexagonal boron nitride (h-BN) has been the most popular approach for the fabrication of graphne/h-BN heterostructures so far. The orientation between graphene and h-BN lattices, however, are not…

材料科学 · 物理学 2019-12-05 Hadi Arjmandi-Tash

Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…

介观与纳米尺度物理 · 物理学 2018-11-28 Yohanes S. Gani , D. S. L. Abergel , Enrico Rossi

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report,…

The atomically-precise controlled synthesis of graphene stripes embedded in hexagonal boron nitride opens up new possibilities for the construction of nanodevices with applications in sensing. Here, we explore properties related to…

Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered…

First-principles investigations on the edge energies and edge stresses of single-layer hexagonal boron-nitride (BN) are presented. The armchair edges of BN nanoribbons (BNNRs) are more stable in energy than zigzag ones. Armchair BNNRs are…

材料科学 · 物理学 2010-11-30 Bing Huang , Hoonkyung Lee , Bing-Lin Gu , Feng Liu , Wenhui Duan

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a…

We numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and…

介观与纳米尺度物理 · 物理学 2012-10-29 Alejandro Lopez-Bezanilla , Stephan Roche

Rhombohedral multilayer graphene hosts a rich landscape of correlated symmetry-broken phases, driven by strong interactions from its flat band edges. Aligning to hexagonal boron nitride (hBN) creates a moir\'e pattern, leading to recent…

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility…

介观与纳米尺度物理 · 物理学 2013-02-06 Dominik Bischoff , Tobias Krähenmann , Susanne Dröscher , Michelle A. Gruner , Clément Barraud , Thomas Ihn , Klaus Ensslin

The hybrid graphene - hexagonal boron nitride (G-hBN) systems offer new routes in the design of nanoscale electronic devices. Using {\it ab initio} density functional theory calculations we investigate the dynamics of zig-zag nanoribbons a…

材料科学 · 物理学 2016-09-21 George Alexandru Nemnes , Camelia Visan , Dragos Victor Anghel , Andrei Manolescu

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes…

材料科学 · 物理学 2013-12-09 Kanokporn Chattrakun , Shengqiang Huang , K. Watanabe , T. Taniguchi , A. Sandhu , B. J. LeRoy

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a…

介观与纳米尺度物理 · 物理学 2011-03-17 S. Das Sarma , E. H. Hwang

The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific…

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with…

介观与纳米尺度物理 · 物理学 2024-07-19 Harsimran Kaur Mann , Mainak Mondal , Vivek Sah , Kenji Watanabe , Takashi Taniguchi , Akshay Singh , Aveek Bid

We study the structural relaxation and electronic properties of a one-dimensional (1D) moir\'e system composed of a zigzag graphene nanoribbon (GNR) placed on a hexagonal boron nitride (hBN) substrate. Using an effective grid model derived…

介观与纳米尺度物理 · 物理学 2026-03-24 Ryosuke Okumura , Naoto Nakatsuji , Takuto Kawakami , Mikito Koshino

We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into…

材料科学 · 物理学 2026-01-22 Elisa Serrano Richaud , Sylvain Latil , Lorenzo Sponza
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