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Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the…

无序系统与神经网络 · 物理学 2025-07-01 Frank Barrows , Forrest C. Sheldon , Francesco Caravelli

A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated…

量子物理 · 物理学 2020-02-18 Tasio Gonzalez-Raya , Joseph M. Lukens , Lucas C. Céleri , Mikel Sanz

Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical…

介观与纳米尺度物理 · 物理学 2017-09-11 Ying Li , Gregory W. Holloway , Simon C. Benjamin , G. Andrew D. Briggs , Jonathan Baugh , Jan A. Mol

Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization…

新兴技术 · 计算机科学 2025-05-13 Wei Yi

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

介观与纳米尺度物理 · 物理学 2012-09-24 Carsten Timm , Massimiliano Di Ventra

We discuss the properties of the dynamics of purely memristive circuits using a recently derived consistent equation for the internal memory variables of the involved memristors. In particular, we show that the number of independent memory…

无序系统与神经网络 · 物理学 2017-07-11 Francesco Caravelli

Memristors offer significant advantages as in-memory computing devices due to their non-volatility, low power consumption, and history-dependent conductivity. These attributes are particularly valuable in the realm of neuromorphic circuits…

神经与进化计算 · 计算机科学 2024-07-19 Julio Souto , Guillermo Botella , Daniel García , Raúl Murillo , Alberto del Barrio

The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…

介观与纳米尺度物理 · 物理学 2016-11-18 Nathan R. McDonald , Robinson E. Pino , Peter J. Rozwood , Bryant T. Wysocki

Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…

新兴技术 · 计算机科学 2022-10-05 T. F. Tiotto , A. S. Goossens , A. E. Dima , C. Yakopcic , T. Banerjee , J. P. Borst , N. A. Taatgen

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Anyone who looks into the circuitry world will be familiar with the three fundamental circuit elements - capacitor, resistor, and inductor. These circuit elements are defined by the relation between two of the four fundamental circuit…

新兴技术 · 计算机科学 2022-05-26 Manoj Mathews

We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an…

新兴技术 · 计算机科学 2020-03-23 Advait Madhavan , Mark D. Stiles

We propose theoretically a generalized memristive system based on controlled spin polarizations in the giant magnetoresistive material using a feedback loop with the classical Hall Effect. The dynamics can exhibit a memristive pinched…

介观与纳米尺度物理 · 物理学 2011-08-23 Weiran Cai , Torsten Schmidt , Udo Jörges , Frank Ellinger

The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…

元胞自动机与格子气 · 物理学 2015-06-03 Andrew Adamatzky , Leon Chua

Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…

材料科学 · 物理学 2013-02-19 Oliver Pabst , Torsten Schmidt

Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their…

超导电性 · 物理学 2017-04-27 Claudio Guarcello , Paolo Solinas , Massimiliano Di Ventra , Francesco Giazotto

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…

介观与纳米尺度物理 · 物理学 2010-02-03 V. Moshnyaga , M. Esseling , L. Sudheendra , O. I. Lebedev , K. Gehrke , G. Van Tendeloo , K. Samwer

The memristance of a memristor depends on the amount of charge flowing through it and when current stops flowing through it, it remembers the state. Thus, memristors are extremely suited for implementation of memory units. Memristors find…

神经与进化计算 · 计算机科学 2022-10-28 Udit Kumar Agarwal , Shikhar Makhija , Varun Tripathi , Kunwar Singh

In-memory computing is an emerging non-von Neumann computing paradigm where certain computational tasks are performed in memory by exploiting the physical attributes of the memory devices. Memristive devices such as phase-change memory…

We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor…

介观与纳米尺度物理 · 物理学 2009-05-05 Yogesh N. Joglekar , Stephen J. Wolf