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Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has…

材料科学 · 物理学 2024-02-27 Shoaib Khalid , Anderson Janotti , Bharat Medasani

In this work, we have systematically studied structural, electronic and magnetic properties of atomic scale defects in 2D transition metal dichalcogenides MX$_2$, (M = Mo and W; X = S, Se and Te) by density functional theory. Various types…

介观与纳米尺度物理 · 物理学 2015-12-24 Soumyajyoti Haldar , Hakkim Vovusha , Manoj Kumar Yadav , Olle Eriksson , Biplab Sanyal

Two-dimensional semiconductors, known as Transition Metal Dichalcogenides (TMDCs), are of great interest among many materials due to their unique 2D characteristics, including exceptional electronic and optical properties. These compounds…

材料科学 · 物理学 2023-10-23 Khawla Jaffel

Two-dimensional (2D) transition-metal dichalcogenides (TMDC) are considered highly promising platforms for next-generation optoelectronic devices. Owing to its atomically thin structure, device performance is strongly impacted by a minute…

介观与纳米尺度物理 · 物理学 2024-04-16 Sergey Trishin , Christian Lotze , Nils Krane , Katharina J. Franke

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of…

介观与纳米尺度物理 · 物理学 2014-07-09 S. Yuan , R. Roldán , M. I. Katsnelson , F. Guinea

Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the…

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are…

Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…

材料科学 · 物理学 2026-04-28 Joshua R. Evans , Diego A. Garibay , Aiden N. Kuhls , Mehmet Z. Baykara

Defects can strongly influence the electronic, optical and mechanical properties of 2D materials, making defect stability under different thermodynamic conditions crucial for material-property engineering. In this paper, we present an…

材料科学 · 物理学 2023-08-10 Alaa Akkoush , Yair Litman , Mariana Rossi

Single-layer transition metal dichalcogenides (TMDCs) can adopt two distinct structures corresponding to different coordination of the metal atoms. TMDCs adopting the T-type structure exhibit a rich and diverse set of phenomena, including…

介观与纳米尺度物理 · 物理学 2020-07-29 Daniel T. Larson , Wei Chen , Steven B. Torrisi , Jennifer Coulter , Shiang Fang , Efthimios Kaxiras

We present a comprehensive first-principles study of the structural and elastic properties of 2H-MX$_2$ transition metal dichalcogenides (TMDs) (M = W, Mo, Ta, Nb; X = S, Se). Using density functional theory with various van der Waals…

材料科学 · 物理学 2025-05-12 S. Azadi , A. Azhar , R. V. Belosludov , T. D. Kühne , M. S. Bahramy

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic,…

Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in…

Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify…

材料科学 · 物理学 2023-04-17 Rafael L. H. Freire , Felipe Crasto de Lima , Adalberto Fazzio

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…

材料科学 · 物理学 2016-01-18 Junwen Li , Nikhil V. Medhekar , Vivek B. Shenoy

We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce…

材料科学 · 物理学 2018-10-24 Sivan Refaely-Abramson , Diana Y. Qiu , Steven G. Louie , Jeffrey B. Neaton

Even the best quality 2D materials have non-negligible concentrations of vacancies and impurities. It is critical to understand and quantify how defects change intrinsic properties, and use this knowledge to generate functionality. This…

其他凝聚态物理 · 物理学 2020-10-22 Pedro Miguel M. C. de Melo , Zeila Zanolli , Matthieu Jean Verstraete

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural…

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…

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