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We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the…

强关联电子 · 物理学 2009-10-30 M. Y. Simmons , A. R. Hamilton , M. Pepper , E. H. Linfield , P. D. Rose , D. A. Ritchie

Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by…

其他凝聚态物理 · 物理学 2009-11-10 Shailesh Shukla , Deepak Kumar , Nitya Nath Shukla , Rajendra Prasad

High pressure in-situ synchrotron X-ray diffraction experiments were performed on Ag2Te up to 42.6 GPa at room temperature and four phases were identified. Phase I ({\beta}-Ag2Te) transformed into phase II at 2.4 GPa, and phase III and…

材料科学 · 物理学 2015-05-01 Zhao Zhao , Shibing Wang , Haijun Zhang , Wendy L. Mao

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully…

材料科学 · 物理学 2020-09-16 Mao Wang , A. Debernardi , Wenxu Zhang , Chi Xu , Ye Yuan , Yufang Xie , Y. Berencén , S. Prucnal , M. Helm , Shengqiang Zhou

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

Temperature modulated Alternating Differential Scanning Calorimetric (ADSC) studies show that Se rich Ge0.15Se0.85-xAgx (0 <= x <= 0.20) glasses are microscopically phase separated, containing Ag2Se phases embedded in a Ge0.15Se0.85…

材料科学 · 物理学 2009-11-11 Pulok Pattanayak , S. Asokan

While graphene is a semi-metal, recently synthesized hydrogenated graphene called graphane, turns out to be an insulator. We have probed the metal insulator Transition in graphene-graphane system within the framework of density functional…

介观与纳米尺度物理 · 物理学 2009-11-10 Prachi Chandrachud , Bhalchandra S. Pujari , D. G. Kanhere

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…

强关联电子 · 物理学 2009-10-30 P. T. Coleridge , R. L. Williams , Y. Feng , P. Zawadzki

In the quantum rotor model with random exchange interactions having a non-zero mean, three phases, a 1) phase (Bose) glass, 2) superfluid, and 3) Mott insulator, meet at a bi-critical point. We demonstrate that proximity to the bi-critical…

强关联电子 · 物理学 2009-11-07 Denis Dalidovich , Philip Phillips

We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the…

强关联电子 · 物理学 2009-10-31 A. R. Hamilton , M. Y. Simmons , M. Pepper , E. H. Linfield , P. D. Rose , D. A. Ritchie

The insulator-to-metal transition in dense fluid hydrogen is an essential phenomenon to understand gas giant planetary interiors and the physical and chemical behavior of highly compressed condensed matter. Using fast laser spectroscopy…

Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe…

材料科学 · 物理学 2025-08-26 Joonho Kim , Kihyun Lee , Joong-Eon Jung , Han Joo Lee , Seongil Im , Kwanpyo Kim

MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…

材料科学 · 物理学 2008-06-17 R. R. Gareev , A. Petukhov , M. Schlapps , M. Doeppe , J. Sadowski , M. Sperl , W. Wegscheider

We performed detailed conductivity and tunneling mesurements on the amorphous, magnetically doped material $\alpha$-Gd$_x$Si$_{1-x}$ (GdSi), which can be driven through the metal-insulator transition by the application of an external…

强关联电子 · 物理学 2009-11-10 L. Bokacheva , W. Teizer , F. Hellman , R. C. Dynes

Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction…

We exhibit an interaction-driven metal-insulator quantum phase transition in a holographic model. Use of a helical lattice enables us to break translation invariance while preserving homogeneity. The metallic phase is characterized by a…

高能物理 - 理论 · 物理学 2013-01-22 Aristomenis Donos , Sean A. Hartnoll

We investigate a symmetry protected $Z_2$ topological electron glass -- a glassy equivalent of the $Z_2$ topological band insulator in crystalline systems -- and uncover associated quantum phase transitions in this three dimensional…

无序系统与神经网络 · 物理学 2020-02-05 Prateek Mukati , Adhip Agarwala , Subhro Bhattacharjee

A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…

介观与纳米尺度物理 · 物理学 2009-10-31 E. Ribeiro , R. Jaeggi , T. Heinzel , K. Ensslin , G. Medeiros-Ribeiro , P. M. Petroff

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase…

介观与纳米尺度物理 · 物理学 2012-11-02 Matthew Brahlek , Namrata Bansal , Nikesh Koirala , Su-Yang Xu , Madhab Neupane , Chang Liu , M. Zahid Hasan , Seongshik Oh

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

材料科学 · 物理学 2017-10-11 F. Liu , S. Prucnal , Y. Berencén , Z. Zhang , Y. Yuan , Y. Liu , R. Heller , R. Boettger , L. Rebohle , W. Skorupa , M. Helm , S. Zhou
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