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Even the best quality 2D materials have non-negligible concentrations of vacancies and impurities. It is critical to understand and quantify how defects change intrinsic properties, and use this knowledge to generate functionality. This…

其他凝聚态物理 · 物理学 2020-10-22 Pedro Miguel M. C. de Melo , Zeila Zanolli , Matthieu Jean Verstraete

Monolayer (1L) transition metal dichalcogenides (TMDs) provide a unique opportunity to control the valley degree of freedom of optically excited charge carriers due to the spin-valley locking effect. Despite extensive studies of the…

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain…

Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability…

Layered molybdenum dichalchogenides are semiconductors whose gap is controlled by delicate interlayer interactions. The gap tends to drop together with the interlayer distance, suggesting collapse and metallization under pressure. We…

材料科学 · 物理学 2016-05-18 Michaela Rifliková , Roman Martoňák , Erio Tosatti

Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here…

Integrating two-dimensional van der Waals materials with optical cavities has revealed a fascinating platform to study exciton-polariton physics. Manipulating exciton polaritons often requires external control over the electrical and…

光学 · 物理学 2023-11-08 Zhi Wang , Li He , Bumho Kim , Bo Zhen

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states…

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…

材料科学 · 物理学 2014-12-10 Jared H. Strait , Parinita Nene , Farhan Rana

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

介观与纳米尺度物理 · 物理学 2021-11-15 Ao Zhang , Kaike Yang , Yun Zhang , Anlian Pan , Mingxing Chen

Ionic liquid gating has been used to modify properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of…

材料科学 · 物理学 2018-10-26 Yueshen Wu , Hailong Lian , Jiaming He , Jinyu Liu , Shun Wang , Hui Xing , Zhiqiang Mao , Ying Liu

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, atomically thin transition-metal…

介观与纳米尺度物理 · 物理学 2018-11-27 Chenqiang Hua , Feng Sheng , Qifeng Hu , Zhu-An Xu , Yunhao Lu , Yi Zheng

Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by…

Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify…

材料科学 · 物理学 2023-04-17 Rafael L. H. Freire , Felipe Crasto de Lima , Adalberto Fazzio

Strongly interacting electrons in layered materials give rise to a plethora of emergent phenomena, such as unconventional superconductivity. heavy fermions, and spin textures with non-trivial topology. Similar effects can also be observed…

介观与纳米尺度物理 · 物理学 2022-08-23 Soroush Arabi , Taner Esat , Aizhan Sabitova , Yuqi Wang , Hovan Lee , Cedric Weber , Klaus Kern , F. Stefan Tautz , Ruslan Temirov , Markus Ternes

We performed high-throughput density functional theory calculations of optical matrix elements between band edges across a diverse set of non-magnetic two-dimensional monolayers with direct band gaps. Materials were ranked as potential…

材料科学 · 物理学 2025-08-15 A. F. Gómez-Bastidas , Karthik Sriram , A. C. Garcia-Castro , Oleg Rubel

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

强关联电子 · 物理学 2016-11-18 A. A. Shashkin , S. V. Kravchenko