相关论文: Electron-hole interactions in coupled InAs-GaSb qu…
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…
We studied a vertical ``quantum dot molecule'', where one of the dots is occupied with electrons and the other with holes. We find that different phases occur in the ground state, depending on the carrier density and the interdot distance.…
We have theoretically investigated the transport properties of a ring-shaped array of small tunnel junctions, which is weakly coupled to the drain electrode. We have found that the long range interaction together with the semi-isolation of…
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two…
We study the two-electron eigenspectrum of a carbon-nanotube double quantum dot with spin-orbit coupling. Exact calculation are combined with a simple model to provide an intuitive and accurate description of single-particle and interaction…
Quantum Hall systems host quasiparticles demonstrating correlated electron physics and non-trivial quantum statistics. Excitonic phases, archetypical for interaction effect, have attracted significant interest in recent years in…
We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed…
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
Arrays of hybrid metal-semiconductor islands offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid islands has a quasi-continuous level…
Two strongly coupled quantum dots are theoretically and experimentally investigated. In the conductance measurements of a GaAs based low-dimensional system additional features to the Coulomb blockade have been detected at low temperatures.…
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and…
Motivated by recent developments on the fabrication and control of semiconductor-based quantum dot qubits, we theoretically study a finite system of tunnel-coupled quantum dots with the electrons interacting through the long-range Coulomb…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire…
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the…
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…
We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real…
A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can…