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相关论文: Electron-hole interactions in coupled InAs-GaSb qu…

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Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…

The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the $8\times 8$ Luttinger-Kohn $\vec{k}\cdot\vec{p}$ Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We…

介观与纳米尺度物理 · 物理学 2016-12-08 Ning Luo , Gaohua Liao , Lin-Hui Ye , H. Q. Xu

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

凝聚态物理 · 物理学 2009-10-28 M. Fricke , A. Lorke , J. P. Kotthaus , G. Medeiros-Ribeiro , P. M. Petroff

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…

材料科学 · 物理学 2009-10-31 A. J. Williamson , L. W. Wang , Alex Zunger

In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires…

介观与纳米尺度物理 · 物理学 2015-06-19 A. A. Zhukov , Ch. Volk , A. Winden , H. Hardtdegen , Th. Schaepers

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…

介观与纳米尺度物理 · 物理学 2007-05-23 T. Ota , M. Stopa , M. Rontani , T. Hatano , K. Yamada , S. Tarucha , H. Z. Song , Y. Nakata , T. Miyazawa , T. Ohshima , N. Yokoyama

High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance…

介观与纳米尺度物理 · 物理学 2007-11-14 K. Grove-Rasmussen , H. I. Jørgensen , P. E. Lindelof

Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional…

The electronic structure of radially polarized excitons in structured nanorings is analyzed, with emphasis in the ground-state properties and their dependence under applied magnetic fields perpendicular to the ring plane. The electron-hole…

介观与纳米尺度物理 · 物理学 2009-11-11 Z. Barticevic , M. Pacheco , J. Simonin , C. R. Proetto

We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…

介观与纳米尺度物理 · 物理学 2009-11-13 J. A. Seamons , C. P. Morath , J. L. Reno , M. P. Lilly

Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band…

材料科学 · 物理学 2009-11-10 Rui-Hua Xie , Garnett W. Bryant , Seungwon Lee , W. Jaskolski

The dynamics of optically generated electron-hole pairs is investigated in a disordered semiconductor nanowire. The particle pairs are generated by short laser pulses and their dynamics is followed using the Heisenberg equation of motion.…

无序系统与神经网络 · 物理学 2007-05-23 I. Varga , C. Schlichenmaier , T. Meier , K. Maschke , P. Thomas , S. W. Koch

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…

介观与纳米尺度物理 · 物理学 2009-10-31 S. Luescher , A. Fuhrer , R. Held , T. Heinzel , K. Ensslin , W. Wegscheider

We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…

强关联电子 · 物理学 2015-05-18 L. -C. Tung , P. A. Folkes , G. Gumbs , W. Xu , Y. J. Wang

When the excitation of carriers in real space is focused down to the nanometer scale, the carrier system can no longer be viewed as homogeneous and ultrafast transport of the excited carrier wave packets occurs. In state-of-the-art…

介观与纳米尺度物理 · 物理学 2019-05-01 F. Lengers , R. Rosati , T. Kuhn , D. E. Reiter

We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we…

Single layer core/shell structures consisting of graphene as core and hexagonal boron nitride as shell are studied using first-principles plane wave method within density functional theory. Electronic energy level structure is analysed as a…

介观与纳米尺度物理 · 物理学 2014-08-05 S. Cahangirov , S. Ciraci

Recent experiments about the low temperature behaviour of a Single Wall Carbon Nanotube (SWCNT) showed typical Coulomb Blockade (CB) peaks in the zero bias conductance and allowed us to investigate the energy levels of interacting…

强关联电子 · 物理学 2009-11-11 S. Bellucci , P. Onorato

We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…

强关联电子 · 物理学 2016-02-17 R. Hevroni , V. Shelukhin , M. Karpovski , M. Goldstein , E. Sela , Hadas Shtrikman , A. Palevski

Quantum dots consisting of an axial Zn0.97Mg0.03Te insertion inside a large bandgap Zn0.9Mg0.1Te nanowire cores are fabricated in a molecular beam epitaxy system by employing the vapor-liquid-solid growth mechanism. Additionally, this…

介观与纳米尺度物理 · 物理学 2023-01-31 P Baranowski , M. Szymura , M. Wojcik , R. Georgiev , S. Chusnutdinow , G. Karczewski , T. Wojtowicz , L. T. Baczewski , P. Wojnar