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相关论文: Electron-hole interactions in coupled InAs-GaSb qu…

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We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…

介观与纳米尺度物理 · 物理学 2008-09-16 E. H. Hwang , S. Das Sarma

We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at…

介观与纳米尺度物理 · 物理学 2016-07-25 Atanu Patra , Monodeep Chakrobarty , Anushree Roy

Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…

介观与纳米尺度物理 · 物理学 2011-06-15 H. Tong , M. W. Wu

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned…

介观与纳米尺度物理 · 物理学 2010-05-07 H. A. Nilsson , O. Karlström , M. Larsson , P. Caroff , J. N. Pedersen , L. Samuelson , A. Wacker , L. E. Wernersson , H. Q. Xu

We report the observation of Coulomb blockade in field electron emission (FE) from single-wall carbon nanotubes (SWCNTs), which is manifested as pronounced steps in the FE current-voltage curves and oscillatory variations in the energy…

Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor…

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled…

介观与纳米尺度物理 · 物理学 2011-04-18 S. Becker , C. Karrasch , T. Mashoff , M. Pratzer , M. Liebmann , V. Meden , M. Morgenstern

The role of the discontinuity of the exchange-correlation potential of density functional theory is studied in the context of electron transport and shown to be intimately related to Coulomb blockade. By following the time evolution of an…

介观与纳米尺度物理 · 物理学 2010-06-08 S. Kurth , G. Stefanucci , E. Khosravi , C. Verdozzi , E. K. U. Gross

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near…

介观与纳米尺度物理 · 物理学 2012-08-29 B. Küng , C. Rössler , M. Beck , J. Faist , T. Ihn , K. Ensslin

We have investigated the electronic states of planar quantum dots at the ZnO interface containing a few interacting electrons in an externally applied magnetic field. In these systems, the electron-electron interaction effects are expected…

介观与纳米尺度物理 · 物理学 2017-05-24 Tapash Chakraborty , Aram Manaselyan , Manuk Barseghyan

Carbon-based nanostructures have unparalleled electronic properties. At the same time, using an allotrope of carbon as the contacts can yield better device control and reproducibility. In this work, we simulate a single-electron transistor…

介观与纳米尺度物理 · 物理学 2024-09-27 Washington F. dos Santos , Felippe Amorim , Alexandre Reily Rocha

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…

介观与纳米尺度物理 · 物理学 2009-10-31 S. De Franceschi , S. Sasaki , J. M. Elzerman , W. G. van der Wiel , S. Tarucha , L. P. Kouwenhoven

We study low-temperature transport through a Coulomb blockaded quantum dot (QD) contacted by a normal (N), and a superconducting (S) electrode. Within an effective cotunneling model the conduction electron self energy is calculated to…

超导电性 · 物理学 2010-12-10 V. Koerting , B. M. Andersen , K. Flensberg , J. Paaske

Room-temperature Coulomb blockade of charge transport through composite nanostructures containing organic inter-links has recently been observed. A pronounced charging effect in combination with the softness of the molecular links implies…

凝聚态物理 · 物理学 2009-10-30 L. Y. Gorelik , A. Isacsson , M. V. Voinova , B. Kasemo , R. I. Shekhter , M. Jonson

A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is…

介观与纳米尺度物理 · 物理学 2011-11-14 Alex Greilich , Samuel G. Carter , Danny Kim , Allan S. Bracker , Daniel Gammon

Motivated by recent experiments, we have studied transport behavior of coupled quantum dot systems in the Coulomb blockade regime using the master (rate) equation approach. We explore how electron-electron interactions in a donor-acceptor…

介观与纳米尺度物理 · 物理学 2009-11-13 Prakash Parida , S Lakshmi , Swapan K Pati

Magnetotransport through cylindrical topological insulator (TI) nanowires is governed by the interplay between quantum confinement and geometric (Aharonov-Bohm and Berry) phases. Here, we argue that the much broader class of TI nanowires…

介观与纳米尺度物理 · 物理学 2020-04-01 Raphael Kozlovsky , Ansgar Graf , Denis Kochan , Klaus Richter , Cosimo Gorini

The interplay between Coulomb interactions and kinetic energy underlies many exotic phases in condensed matter physics. In a two-dimensional electronic system, If Coulomb interaction dominates over kinetic energy, electrons condense into a…

介观与纳米尺度物理 · 物理学 2025-10-03 Chenggang Yang , Jun Lu , Hongzhang Wang , Jian Zeng , Wendong Bian , Zhengshan Guo , Jiankun Li , Yulei Zhang , Junwei Luo , Tian Pei

Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically…

介观与纳米尺度物理 · 物理学 2024-04-10 Arthur Lin , Matthew F. Doty , Garnett W. Bryant

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…

介观与纳米尺度物理 · 物理学 2015-06-23 A. C. Betz , M. F. Gonzalez-Zalba , G. Podd , A. J. Ferguson
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