相关论文: Electron-hole interactions in coupled InAs-GaSb qu…

The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with…

We propose a quantum approach to "electron-hole exchange", better named electron-hole pair exchange, that makes use of the second quantization formalism to describe the problem in terms of Bloch-state electron operators. This approach…

III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…

In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas.…

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…

We investigate the effect of electronic correlations on the transmission phase of quantum coherent scatterers, considering quantum dots in the Coulomb blockade regime connected to two single-channel leads. We focus on transmission zeros and…

We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that…

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…

We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge…

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…

Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the…

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…

We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like…

Characterization of the structural and electron transport properties of single chiral molecules provides critical insights into the interplay between their electronic structure and electrochemical environments, providing broader…

We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…

In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…

We investigate sequential tunneling transport through a semiconductor double quantum dot structure by combining a simple microscopic quantum confinement model with a Mott-Hubbard type correlation model. We calculate nonperturbatively the…