相关论文: Electron-hole interactions in coupled InAs-GaSb qu…

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot…

Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…

We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters…

The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated…

We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional direct-diagonalization approach for the description of few-particle Coulomb-correlated states. We present a detailed…

In this work we discuss the combined effects of finite-range electron-electron interaction and finite-range tunneling on the transport properties of ultrasmall tunnel junctions. We show that the Coulomb blockade phenomenon is deeply…

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…

In the recent work of Ref.\cite{Vlaic2017-bs}, it has been shown that Pb nanocrystals grown on the electron accumulation layer at the (110) surface of InAs are in the regime of Coulomb blockade. This enabled the first scanning tunneling…

We have observed anomalous transport properties for a 50 nm Bi dot in the Coulomb-blockade regime. Over a range of gate voltages, Coulomb blockade peaks are suppressed at low bias, and dramatic structure appears in the current at higher…

In the framework of four-band envelope-function formalism, developed earlier for spherical semiconductor nanocrystals, we study the electronic structure and optical properties of quantum-confined lead-salt (PbSe and PbS) nanowires (NWs)…

Multi-donor architecture in silicon offers a promising direction towards scalable solid-state qubits and quantum technologies operating at practical conditions. However, the overlap of multiple donor wave-functions develops a complex…

We present a microscopic picture of quantum transport in quantum antidots in the quantum Hall regime taking electron interactions into account. We discuss the edge state structure, energy level evolution, charge quantization and…

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…

The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with…

The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the…

Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…

GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that optical emission of such NWs occurs either predominantly above…

We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the…

We analyze theoretically THz response of an electron-hole pair confined in a semiconductor nanoparticle. We show that the interplay of particle confinement and electron-hole Coulomb interaction leads to significant renormalizations and…

Coulomb interactions can have a decisive effect on the ground state of electronic systems. The simplest system in which interactions can play an interesting role is that of two electrons on a string. In the presence of strong interactions…