Imaging Electrical Conduction through InAs Nanowires
摘要
We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify multiple quantum dots located along the nanowire - each dot is surrounded by a series of concentric rings corresponding to Coulomb blockade peaks. An image locates the dots and provides information about their size. The rings around individual dots interfere with each other like Coulomb blockade peaks of multiple quantum dots in series. In this way, the SPM tip can probe complex multi-dot systems by tuning the charge state of individual dots. The nanowires were grown from metal catalyst particles and have diameters ~ 80 nm and lengths 2 to 3 um.
引用
@article{arxiv.cond-mat/0610514,
title = {Imaging Electrical Conduction through InAs Nanowires},
author = {Ania C. Bleszynski and Floris A. Zwanenburg and Robert M. Westervelt and Aaroud L. Roest and Erik P. A. M. Bakkers and Leo P. Kouwenhoven},
journal= {arXiv preprint arXiv:cond-mat/0610514},
year = {2007}
}
备注
15 pages containing 5 figures