相关论文: On Effective Holographic Mott Insulators
A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…
Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…
The Mott insulating state formed from bosons is ubiquitous in solid He-4, cold atom systems, Josephson junction networks and perhaps underdoped high-Tc superconductors. We predict that close to the quantum phase transition to the…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of…
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…
We reconsider the holographic model featuring a superconducting dome on the temperature-doping phase diagram with a modified view on the role of the two charges. The first type charge with density $\rho_{A}$ make the Mott insulator, and the…
We study roles of electron correlations on topological insulators on the honeycomb lattice with the spin-orbit interaction. Accurate variational Monte Carlo calculations show that the increasing on-site Coulomb interactions cause a strong…
Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…
In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…
We show, by using a correlated Jastrow wave function and a mapping onto a classical model, that the two-dimensional Mott transition in a simple half-filled one-band model can be unconventional and very similar to the binding-unbinding…
The possibility of novel behavior at interfaces between strongly and weakly correlated materials has come under increased study recently. In this paper, we use determinant Quantum Monte Carlo to determine the inter-penetration of metallic…
The study of nonequilibrium phenomena in interacting lattice systems can provide new perspectives on correlation effects, and information on metastable states of matter. Mott insulators are a promising class of systems for nonequilibrium…
Conductivity is one of the most direct probes of electronic systems, yet its theoretical description remains challenging in the presence of strong non-local correlations. In this Letter, we analyze the conductivity of the half-filled…
At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…
The layered Mott insulator ${\alpha}$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on…
Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…
Recently, gravity duals for certain Galilean-invariant conformal field theories have been constructed. In this paper, we point out that the spectrum of the particle number operator in the examples found so far is not a necessary consequence…
We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects…
We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…