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相关论文: On Effective Holographic Mott Insulators

200 篇论文

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

Charge excitations in Mott insulators (MIs) are distinct from their band-insulator counterparts and they can provide a mechanism for energy harvesting in solar cells based on strongly correlated electronic materials. In this paper, we study…

The IR dynamics of effective holographic theories capturing the interplay between charge density and the leading relevant scalar operator at strong coupling are analyzed. Such theories are parameterized by two real exponents…

高能物理 - 理论 · 物理学 2010-12-06 C. Charmousis , B. Goutéraux , B. S. Kim , E. Kiritsis , Rene Meyer

We study small systems of Mott insulating ultracold atoms under the influence of gauge potentials and spin-orbit couplings. We use second order perturbation theory in tunneling, derive an effective theory for the Mott insulators with one…

量子气体 · 物理学 2012-09-28 J. -P. Martikainen

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function…

强关联电子 · 物理学 2009-11-13 Satoshi Okamoto

We propose a new method to compute nonlinear transport coefficients in holography, such as nonlinear DC conductivity and nonlinear friction coefficient. The conventional method can be applied only to the models whose action in the gravity…

高能物理 - 理论 · 物理学 2024-09-02 Shuta Ishigaki , Shin Nakamura , Kazuaki Takasan

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

We study a holographic model in which the striped structure of charge density is spontaneously formed over an ionic lattice which breaks the translational symmetry explicitly. The effect of commensurate lock-in between the spontaneous…

高能物理 - 理论 · 物理学 2024-12-02 Yi Ling , Peng Liu , Meng-He Wu

Creating heterostructures with graphene/graphite is a practical method for charge-doping $\alpha$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy…

Motivated by the current interest in the understanding of the Mott insulators away from half filling, observed in many perovskite oxides, we study the Mott metal-insulator transition (MIT) in the doped Hubbard-Holstein model using the…

强关联电子 · 物理学 2017-08-30 Jamshid Moradi Kurdestany , S. Satpathy

Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…

We study two different metal-insulating transitions possibly occurring in one-dimensional Kondo lattices. First, we show how doping the pure Kondo lattice model in the strong-coupling limit, results in a Pokrovsky-Talapov transition. This…

强关联电子 · 物理学 2009-10-31 Karyn Le Hur

Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…

强关联电子 · 物理学 2012-02-28 Masanori Kohno

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…

We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of…

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation)…

材料科学 · 物理学 2011-10-20 Junwoo Son , Siddharth Rajan , Susanne Stemmer , S. James Allen

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

We study magnetic properties of a periodically driven Mott insulator with strong spin-orbit coupling and show some properties characteristic of linearly polarized light. We consider a $t_{2g}$-orbital Hubbard model driven by circularly or…

强关联电子 · 物理学 2021-12-10 Naoya Arakawa , Kenji Yonemitsu

We investigate by means of the time-dependent Gutzwiller approximation the transport properties of a strongly-correlated slab subject to Hubbard repulsion and connected with to two metallic leads kept at a different electrochemical…

强关联电子 · 物理学 2015-05-18 G. Mazza , A. Amaricci , M. Capone , M. Fabrizio