相关论文: Behavioral modeling of stressed MOSFET
The mechanical behavior of magnetoelectric transducers consisting of piezoelectric-magnetostrictive bilayers has been modeled. The effect of the aspect ratio of the transducer as well as the influence of non-active surrounding layers has…
In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…
We present a computational study on the impact of tensile/compressive uniaxial ($\varepsilon_{xx}$) and biaxial ($\varepsilon_{xx}=\varepsilon_{yy}$) strain on monolayer MoS$_{2}$ NMOS and PMOS FETs. The material properties like band…
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their electrotransport and electromechanical performances can be…
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the…
The migration characteristics of a suspended deformable droplet in a parallel plate microchannel is studied, both analytically and numerically, under the combined influence of a constant temperature gradient in the transverse direction and…
Using both analytic and numerical analyses of the Poisson-Nernst-Planck equations we theoretically investigate the electric conductivity of a conical channel, which in accordance with recent experiments exhibits a strong non-linear pressure…
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
Based on the numerical solution non-stationary Ginzburg-Landau equations, we investigated the evolution of the order parameter of superconducting channels with different lengths under applied voltage (so-called voltage-driven regime). We…
The stress versus strain curves in dense colloidal dispersions under start-up shear flow are investigated combining experiments on model core-shell microgels, computer simulations of hard disk mixtures, and mode coupling theory. In dense…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
When a gas in an externally imposed potential field is compressed, temperature gradients appear. This has been called the piezothermal effect. It is possible to analytically calculate the time-dependent behavior of the piezothermal effect…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
It has been recently observed that synthetic materials subjected to an external elastic stress give rise to scaling phenomena in the acoustic emission signal. Motivated by this experimental finding we develop a mesoscopic model in order to…
We study switching current distributions in superconducting nanostrips using theoretical models and numerical simulations. Switching current distributions are commonly measured in experiments and may provide a window into the microscopic…
Piezo1 ion channels are voltage-modulated, stretch-activated ion channels involved in a variety of important physiological and pathophysiological processes, as for example cardiovascular development and homeostasis. Since its discovery, it…
For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an…
We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper consideration of charge trapping in the…